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| SI5509DC New Product Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Channel P-Channel P Channel 20 -20 20 FEATURES ID (A) 6.1a 4.8a -4.8a -3.6a 3.8 3 8 nc 3.9 3 9 nc rDS(on) (W) 0.052 at VGS = 4.5 V 0.084 at VGS = 2.5 V 0.090 at VGS = -4.5 V 0.160 at VGS = -2.5 V Qg (Typ) D TrenchFETr Power MOSFETs APPLICATIONS D Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits COMPLIANT RoHS 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 G2 G1 Marking Code ED XXX Lot Traceability and Date Code S1 N-Channel MOSFET D2 P-Channel MOSFET Bottom View Ordering Information: SI5509DC-T1-E3 (Lead (Pb)-Free) Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Source-Drain Source Drain Current Diode Current TC = 25 _C TA = 25 _C TC= 25 _C Maximum Power Dissipation TC= 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS N-Channel 20 "12 6.1a 4.9a 5.0b, c 3.9b, c 10 3.7 1.7b, c 4.5 2.88 2.1b, c 1.33b, c -55 to 150 260 P-Channel -20 Unit V -4.8a -3.8a -3.9b, c -3.1b, c -15 -3.7 -1.7b, c 4.5 2.88 2.1b, c 1.33b, c _C W A THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t v 5 sec Steady-State P-Channel Typ 50 30 Symbol RthJA RthJF Typ 50 30 Max 60 40 Max 60 40 Unit _C/W Notes a. Based on TC = 25 _C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 _C/W for both channels. Document Number: 73629 S-60417--Rev. A, 20-Mar-06 www.vishay.com 1 SI5509DC New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Static VGS = 0 V, ID = 250 mA Drain-Source Drain Source Breakdown Voltage VDS VGS = 0 V, ID = -250 mA ID = 250 mA ID = -250 mA ID = 250 mA ID = -250 mA VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 _C VDS = -20 V, VGS = 0 V, TJ = 55 _C On-State On State Drain Currentb VDS v 5 V, VGS = 4.5 V ID( ) D(on) VDS v -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 5.0 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = -4.5 V, ID = -3.9 A VGS = 2.5 V, ID = 3.9 A VGS = -2.5 V, ID = -2.9 A Forward Transconductanceb gf fs VDS = 10 V, ID = 5.0 A VDS = -10 V, ID = -3.9 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch 10 -15 0.043 0.074 0.068 0.128 10.4 8.2 S 0.052 0.090 0.084 0.160 W A 0.7 -0.7 20 -20 18.4 -15.1 -3.4 2.2 2 -2 100 -100 1 -1 10 -10 mA nA V mV/_C Vishay Siliconix Symbol Test Condition Min Typa Max Unit VDS Temperature Coefficient DVDS/TJ VGS( h) Temperature Coefficient GS(th) DVGS( h)/TJ GS(th) Gate Threshold Voltage VGS( h) GS(th) IGSS Gate-Body Gate Body Leakage Dynamica N-Ch Input Capacitance Ciiss Coss Crss VDS = 10 V, VGS = 5 V, ID = 4.0 A Total Gate Charge Qg VDS = -10 V, VGS = -5 V, ID = -3.9 A N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P Channel P-Channel VDS = -10 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance P-CH N Ch N-Ch P-Ch N Ch N-Ch P-Ch N-Ch P-Ch N Ch N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.0 A Gate-Source Gate Source Charge Qgs P Channel P-Channel VDS = -10 V, VGS = -4.5 V, ID = -3.9 A Gate-Drain Gate Drain Charge Qgd d Rg f = 1 MHz P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch 455 300 85 95 50 65 4.4 4.1 3.8 3.9 0.9 0.7 0.95 1.25 1.9 8 W 6.6 6.2 5.7 5.9 nC pF Output Capacitance Gate Resistance www.vishay.com 2 Document Number: 73629 S-60417--Rev. A, 20-Mar-06 SI5509DC New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Dynamica Turn-On Turn On Delay Time td( ) d(on) tr td( ff) d(off) tf N-Channel N Channel VDD = 10 V, RL =2.5 W ID ^ 4.0 A, VGEN = 4.5 V, Rg = 1 W P Channel P-Channel VDD = -10 V, RL = 3.2 W ID ^ -3 14 A, VGEN = -4.5 V, Rg = 1 W -3.14 A -4 5 V N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch 6 8 95 75 12 25 6 60 9 12 143 113 18 38 9 90 ns Vishay Siliconix Symbol Test Condition Min Typa Max Unit Rise Time Turn-Off Turn Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source Drain Diode Current Source-Drain Pulse Diode Forward Currenta IS ISM IS = 2.4 A, VGS = 0 V Body Diode Voltage VSD trr Qrr ta tb N-Channel IF = 2.4 A, di/dt = 100 A/ms, TJ = 25 _C P Channel P-Channel IF = -1.5 A, di/dt = -100 A/ms, TJ = 25 _C IS = -1.5 A, VGS = 0 V TC = 25 _C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Body Diode Reverse Recovery Time P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Reverse Recovery Rise Time P-Ch 0.8 -0.8 12 18 5 8 7.5 14 4.5 4 ns 3.75 -3.75 10 -15 1.2 -1.2 18 27 8 12 nC ns V A Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73629 S-60417--Rev. A, 20-Mar-06 www.vishay.com 3 SI5509DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics 15 VGS = 5 V thru 3.5 V 12 4 5 Vishay Siliconix N CHANNEL Transfer Characteristics I D - Drain Current (A) 9 VGS = 2.5 V 6 I D - Drain Current (A) VGS = 3 V 3 2 TC = 125 _C 1 TC = 25 _C TC = -55 _C 3 VGS = 2 V VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.20 600 Capacitance rDS(on) - On-Resistance (mW) 500 C - Capacitance (pF) 0.15 Ciss 400 0.10 VGS = 2.5 V 300 VGS = 4.5 V 0.05 200 Coss Crss 0 4 8 12 16 20 100 0.00 0 3 6 9 12 15 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) ID = 4 A 4 VGS = 10 V 3 VGS = 16 V 2 rDS(on) - On-Resistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5 A 1.2 VGS = 2.5 V ID = 3.9 A 1.0 1 0.8 0 0 1 2 3 4 5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 73629 S-60417--Rev. A, 20-Mar-06 www.vishay.com 4 SI5509DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage 100.00 rDS(on) - Drain-to-Source On-Resistance (W) 0.20 ID = 5 A 0.15 Vishay Siliconix N CHANNEL On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10.00 TA = 150 _C 0.10 TA = 125 _C 1.00 TA = 25 _C 0.05 TA = 25 _C 0.00 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.5 50 Single Pulse Power 1.3 ID = 250 mA 1.1 Power (W) VGS(th) (V) 40 30 0.9 20 0.7 10 0.5 -50 -25 0 25 50 75 100 125 150 0 10-4 10-3 10-2 10-1 Time (sec) 1 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 100 ms 1 1s 10 s 0.1 TA = 25 _C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73629 S-60417--Rev. A, 20-Mar-06 www.vishay.com 5 SI5509DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* 7 6 5 ID - Drain Current (A) Package Limited 4 3 2 1 0 0 25 50 75 100 125 150 4.0 3.5 3.0 Power Dissipation (W) 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 Vishay Siliconix N CHANNEL Power De-Rating TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73629 S-60417--Rev. A, 20-Mar-06 SI5509DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 _C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73629 S-60417--Rev. A, 20-Mar-06 www.vishay.com 7 SI5509DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics 10 VGS = 5 V thru 3 V 8 VGS = 2.5 V 4 5 Vishay Siliconix P CHANNEL Transfer Characteristics I D - Drain Current (A) 6 I D - Drain Current (A) 3 4 VGS = 2 V 2 TC = 125 _C 1 TC = 25 _C TC = -55 _C 0.5 1.0 1.5 2.0 2.5 2 VGS = 1.5 V 0 0.0 0.6 1.2 1.8 2.4 3.0 0 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.20 600 Capacitance rDS(on) - On-Resistance (W) 500 VGS = 2.5 V C - Capacitance (pF) 0.15 400 Ciss 300 0.10 VGS = 4.5 V 200 Coss 100 Crss 0.05 0.00 0 2 4 6 8 10 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) ID = 3.9 A 4 VGS = 10 V 3 VGS = 16 V rDS(on) - On-Resistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V, ID = 3.9 A VGS = 2.5 V, ID = 2.9 A 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 73629 S-60417--Rev. A, 20-Mar-06 www.vishay.com 8 SI5509DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage 100.00 rDS(on) - Drain-to-Source On-Resistance (W) 0.3 ID = 3.9 A Vishay Siliconix P CHANNEL On-Resistance vs. Gate-to-Source Voltage 10.00 I S - Source Current (A) TA = 125 _C 1.00 0.2 TA = 125 _C 0.1 TA = 25 _C 0.10 TA = 25 _C 0.01 0.00 0.0 0.0 0.4 0.8 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.2 50 Single Pulse Power 1.1 40 0.9 ID = 250 mA 0.8 Power (W) 1.0 VGS(th) (V) 30 20 10 0.7 0 10-4 0.6 -50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 Time (sec) 1 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 10 I D - Drain Current (A) Limited by rDS(on) 10 ms 100 ms 1 1s 10 s 0.1 dc 0.01 TA = 25 _C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73629 S-60417--Rev. A, 20-Mar-06 www.vishay.com 9 SI5509DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* 6 4.0 3.5 3.0 ID - Drain Current (A) 4 Package Limited 3 Power Dissipation (W) 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 Vishay Siliconix P CHANNEL Power De-Rating 5 2 1 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73629 S-60417--Rev. A, 20-Mar-06 SI5509DC New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix P CHANNEL 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 _C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73629. Document Number: 73629 S-60417--Rev. A, 20-Mar-06 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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